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MRAM write apparatus and method

Patent
US-6351409-B1
Inventor

RIZZO NICHOLAS D (US)

ENGEL BRADLEY N (US)

Assignee
MOTOROLA INC (US)
Country
United States
Dates
  • Priority:
    2001/01/04
  • Grant:
    2002/02/26
Description
This web page summarizes information in PubChem about patent US-6351409-B1. This includes chemicals mentioned, as reported by PubChem contributors, as well as other content, such as title, abstract, and International Patent Classification (IPC) codes. To read more about how this page was constructed, please visit the PubChem patents help page.

1 Abstract

An MRAM cell and a method of programming the cell are disclosed. The cell includes a free layer of magnetic material having a ferromagnetic resonance with a resonant frequency, the ferromagnetic resonance having a Q greater than one. A hard axis and an easy axis write line are positioned in magnetic communication with the free layer. A cladding layer partially surrounds the hard axis write line and has a similar resonant frequency and with a ferromagnetic resonance Q greater than one. A write signal including the resonant frequency is applied to the hard axis write line and simultaneously a write pulse is applied to the easy axis write line. The Qs of the cell and the cladding layer multiply to substantially increase the switching magnetic field or reduce the current required to provide the same magnetic field.

2 Full Text

3 Important Dates

3.1 Priority Date

2001/01/04

3.2 Filing Date

2001/01/04

3.3 Publication Date

2002/02/26

3.4 Grant Date

2002/02/26

4 Inventor

RIZZO NICHOLAS D (US)

ENGEL BRADLEY N (US)

5 Assignee

MOTOROLA INC (US)

6 Country

United States

7 Patent Family

8 Classification

8.1 IPC

H10N50/10 (inventive)

G11C11/15 (inventive)

H01L27/105 (inventive)

H01L21/8246 (inventive)

8.2 CPC

G11C11/1675 (inventive)

G11C11/15 (inventive, first)

9 Citations

10 Cited By

11 Similar Patents

12 Information Sources

  1. Google Patents
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