Extended self-aligned crown-shaped rugged capacitor for high density DRAM cells
Patent
US-6232648-B1
Inventor
WU SHYE-LIN (TW)
Country
United States
Dates
- Priority:1998/07/27
- Grant:2001/05/15
Description
This web page summarizes information in PubChem about patent US-6232648-B1. This includes chemicals mentioned, as reported by PubChem contributors, as well as other content, such as title, abstract, and International Patent Classification (IPC) codes. To read more about how this page was constructed, please visit the PubChem patents help page.
The present invention disclosed a structure of a self-aligned crown-shaped rugged capacitor for high density DRAM (dynamic random access memory) cells. The crown-shaped rugged capacitor for high density DRAM cells can be formed without the prior art crack issue. One of the advantages of the structure and a method provided in the invention is that the storage cell can be formed with reduced processing steps. A capacitor cell structure of the present invention includes a first electrode of a first conductive material, a dielectric film, and a second electrode of a second conductive material. The first electrode has a rugged surface on regions uncovered by an underlying dielectric layer, and the first electrode includes a base contact portion, first laterally extended edges, first vertically extended regions, second laterally extended edges, and second vertically extended regions. The dielectric film is formed over the first electrode and the second electrode is formed over the dielectric film.
1998/07/27
1999/07/14
2001/05/15
2001/05/15
WU SHYE-LIN (TW)
United States
H01L21/02 (inventive)
H01L28/82 (inventive, first)
H01L28/91 (inventive)
H01L28/87
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