Semiconductor device, and method for manufacturing the same
Patent
US-6211038-B1
Inventor
NAKAGAWA KATSUMI (JP)
YONEHARA TAKAO (JP)
NISHIDA SHOJI (JP)
SAKAGUCHI KIYOFUMI (JP)
IWASAKI YUKIKO (JP)
Assignee
CANON KK (US)
Country
United States
Dates
- Priority:1997/03/27
- Grant:2001/04/03
Description
This web page summarizes information in PubChem about patent US-6211038-B1. This includes chemicals mentioned, as reported by PubChem contributors, as well as other content, such as title, abstract, and International Patent Classification (IPC) codes. To read more about how this page was constructed, please visit the PubChem patents help page.
A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.
1997/03/27
1998/03/25
2001/04/03
2001/04/03
NAKAGAWA KATSUMI (JP)
YONEHARA TAKAO (JP)
NISHIDA SHOJI (JP)
SAKAGUCHI KIYOFUMI (JP)
IWASAKI YUKIKO (JP)
CANON KK (US)
United States
- JP-3647191-B2
- JP-H10270361-A
- US-6211038-B1
H01L21/762 (inventive)
H01L21/20 (inventive)
H01L31/04 (inventive, first)
H01L21/76259 (inventive, first)
- US-5250460-A (SEA)
- JP-H0645622-A (APP)
- US-5466631-A (SEA)
- US-5543648-A (APP)
- US-5811348-A (APP)
- US-5856229-A (SEA)
- US-5869387-A (APP)
- P. Schmuki, "Initiation and Formation of Porous GaAs", J. Electrochem. Soc., vol. 143, No. 10, pp. 3316-3322 (1996). (APP)
- R. Herino, "Porosity and Pore Size Distributions of Porous Silicon Layers", J. Electrochem. Soc., vol. 134, No. 7, pp. 1994-2000 (1987). (APP)
- US-2003188680-A1 (PRS)
- US-6818104-B2 (APP)
- US-2004251462-A1 (PRS)
- US-2004259315-A1 (PRS)
- US-2005066881-A1 (PRS)
- US-2005082526-A1 (PRS)
- US-2005087226-A1 (PRS)
- US-2005109388-A1 (PRS)
- US-2005124137-A1 (PRS)
- US-2005132332-A1 (PRS)
- US-2005148122-A1 (PRS)
- US-6951585-B2 (SEA)
- US-7015507-B2 (APP)
- US-7022585-B2 (APP)
- US-2006166468-A1 (PRS)
- US-2006184266-A1 (PRS)
- US-2006194417-A1 (PRS)
- US-2006246688-A1 (PRS)
- US-7164183-B2 (APP)
- US-2007075340-A1 (PRS)
- DE-102005047149-A1 (SEA)
- US-7282190-B2 (APP)
- US-7341923-B2 (APP)
- CN-100394563-C (SEA)
- US-7399693-B2 (APP)
- US-2008271783-A1 (PRS)
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- US-7772078-B2 (APP)
- EP-2256786-A1 (I) (SEA)
- US-7855101-B2 (SEA)
- US-2011057295-A1 (PRS)
- US-7919381-B2 (APP)
- US-8030119-B2 (SEA)
- US-8237761-B2 (APP)
- US-8670015-B2 (APP)
- US-8900399-B2 (APP)
- US-2020215968-A1 (A) (SEA)
- US-11551590-B2 (SEA)
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