Process for the manufacture of a transistor
Patent
EP-0057126-B1
Country
European Patent Office
Dates
- Priority:1981/01/27
- Grant:1988/08/17
Description
This web page summarizes information in PubChem about patent EP-0057126-B1. This includes chemicals mentioned, as reported by PubChem contributors, as well as other content, such as title, abstract, and International Patent Classification (IPC) codes. To read more about how this page was constructed, please visit the PubChem patents help page.
1981/01/27
1982/01/18
1988/08/17
1988/08/17
European Patent Office
H01L21/8224 (inventive)
H01L21/763 (inventive)
H01L21/31 (inventive)
H01L21/822 (inventive)
H01L29/73 (inventive)
H01L21/76 (inventive)
H01L21/74 (inventive)
H01L27/082 (inventive)
H01L21/331 (inventive)
H01L27/04 (inventive)
H01L29/41 (inventive)
H01L21/763 (inventive, first)
H01L21/743 (inventive)
IBM TECHNICAL DISCLOSURE BULLETIN vol. 23, no. 4, septembre 1983 NEW YORK (US) H.H. BERGER et al.: "Method of producing transitors with optimum base contact" pages 1487-1488 (EXA)
DE-3931381-A1 (SEA)
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- Google PatentsLICENSE"Google Patents Research Data" by Google, based on data provided by IFI CLAIMS Patent Services and OntoChem, is licensed under a Creative Commons Attribution 4.0 International License.https://creativecommons.org/licenses/by/4.0/legalcode
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