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Semiconductor package and method of forming same

Patent
US-2022278036-A1
Inventor

WU JIUN YI (TW)

YU CHEN-HUA (TW)

LIU CHUNG-SHI (TW)

Assignee
TAIWAN SEMICONDUCTOR MFG CO LTD (TW)
Country
United States
Dates
  • Priority:
    2021/02/26
Description
This web page summarizes information in PubChem about patent US-2022278036-A1. This includes chemicals mentioned, as reported by PubChem contributors, as well as other content, such as title, abstract, and International Patent Classification (IPC) codes. To read more about how this page was constructed, please visit the PubChem patents help page.

1 Abstract

In an embodiment, a method for manufacturing a semiconductor device includes forming a redistribution structure on a carrier substrate, connecting a plurality of core substrates physically and electrically to the redistribution structure with a first anisotropic conductive film, the first anisotropic conductive film including a dielectric material and conductive particles, and pressing the plurality of core substrates and the redistribution structure together to form conductive paths between the plurality of core substrates and the redistribution structure with the conductive particles in the first anisotropic conductive film. The method also includes encapsulating the plurality of core substrates with an encapsulant. The method also includes and attaching an integrated circuit package to the redistribution structure, the redistribution structure being between the integrated circuit package and the plurality of core substrates, the integrated circuit package laterally overlapping a first core substrate and a second core substrate of the plurality of core substrates.

2 Full Text

3 Important Dates

3.1 Priority Date

2021/02/26

3.2 Filing Date

2021/02/26

3.3 Publication Date

2022/09/01

4 Inventor

WU JIUN YI (TW)

YU CHEN-HUA (TW)

LIU CHUNG-SHI (TW)

5 Assignee

TAIWAN SEMICONDUCTOR MFG CO LTD (TW)

6 Country

United States

7 Patent Family

8 Classification

8.1 IPC

H01L21/48 (inventive)

H01L23/00 (inventive)

H01L23/498 (inventive, first)

H01L23/31 (inventive)

8.2 CPC

H01L23/49833

H01L23/49822

H01L21/4857

H01L23/49816

H01L21/6835 (inventive)

H01L23/562 (inventive, first)

H01L2221/68345

H01L21/50 (inventive, first)

H01L24/02 (inventive)

H01L21/4853 (inventive)

H01L2224/02373

H01L2224/02379

H01L23/488 (inventive)

H01L23/49838 (inventive)

H01L2224/16227

H01L23/49811 (inventive)

H01L24/16 (inventive)

H01L23/31 (inventive)

9 Citations

10 Cited By

11 Similar Patents

12 Information Sources

  1. Google Patents
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  2. PubChem
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